Development of new magnetic materials and processes to deposit such materials for application in high frequency magnetic cores, development of GaN-on-Si epiwafer material and processes to fabricate such epiwafers, for application in HF GaN switches, and finally investigate several exploratory GaN process steps to support the development of the next generation GaN switches.

Develop the components for the GaNonCMOS demonstrators.

Fully tested GaN VRMs that will be ready for testing in an industrial environment.

Define the specifications for each VRM demonstrator, fabricate the package-, stack and chip-level VRM demonstrators, perform functional testing and bring them up in the final application/industrial environment.

Promote the up-scale and use of the newly developed demonstrators and technologies amongst specifically identified European and International companies as well as provide opportunities for these stakeholders to deliver feedback on the project results to identify future collaboration. Facilitate a short time to market of the project results. Design and execute an effective dissemination and communication strategies for the benefit of the European industry, the European research area, and the public at large.

Provide effective management and control of the project.