2 GaNonCMOS papers at PCIM Europe 2021!

We are very happy to announce that two papers partly based on GaNonCMOS-research of AT&S and Fraunhofer IAF were accepted as oral presentations for the PCIM Europe 2021 Conference Program.

The first presentation on the “Design of Low-Resistance and Area-Efficient GaN-HEMTs for Low-Voltage Power Applications” is scheduled on Tuesday, 4 May 2021 at 10:20 h (Stream 1 GaN Devices).

The second presentation on “High Power Density DC-DC Converters Using Highly Integrated Half-Bridge GaN ICs” will be held on Wednesday, 5 May 2021 at 14:40h (Stream 1 SiC/GaN Devices I).

If you are attending PCIM Europe this year, make sure not miss these presentations!

The abstracts of both papers can be found here.

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