2 GaNonCMOS papers at PCIM Europe 2021!
We are very happy to announce that two papers partly based on GaNonCMOS-research of AT&S and Fraunhofer IAF were accepted as oral presentations for the PCIM Europe 2021 Conference Program.
The first presentation on the “Design of Low-Resistance and Area-Efficient GaN-HEMTs for Low-Voltage Power Applications” is scheduled on Tuesday, 4 May 2021 at 10:20 h (Stream 1 GaN Devices).
The second presentation on “High Power Density DC-DC Converters Using Highly Integrated Half-Bridge GaN ICs” will be held on Wednesday, 5 May 2021 at 14:40h (Stream 1 SiC/GaN Devices I).
If you are attending PCIM Europe this year, make sure not miss these presentations!
The abstracts of both papers can be found here.