Article published in Compound Semiconductor Magazine

Stefan Eisenbrandt and Ralf Lerner of X-FAB published an article “Printing GaN HEMTs onto silicon CMOS” in the latest issue of Compound Semiconductor Magazine. The article details how using a¬†micro-transfer printing technique could boost the efficiency of integrated power electronics by uniting high-performance GaN HEMTs with highly integrated silicon CMOS. The article is available for download in the “Publications” section of this website.

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