Project partner AT&S presented two new demonstrators based on GaNonCMOS research results at the Electronica in Shanghai on March 20-22, 2019. Leaflets detailing both demonstrators for an Updated Embedded Inductor and Wireless Charging are available for download from the Publications section of this website.
GaNonCMOS is happy to announce the organisation of a joint Summer School together with the Inrel-Npower project. The Summer School will be held Monday 8 to Friday 12th of July 2019 at the culture and congress centre ‘Het Pand’ in the city of Ghent, Belgium. The summer school aims to inform both young and experienced researchers with a focus of applications of GaN/AlGaN within the field of power applications and integration for CMOS devices. The workshop content will also contain major results obtained through both GaNonCMOS and the InRel-NPower project.
Markus Stöger of Recom recently held two presentations, including information about the GaNOnCMOS project, at the Anwendungsform Leistungshalbleister in Munich from 7 – 8 November 2018 and the Power Electronics Conference in Munich on 4 December 2018. A shortend version of the presentation that was held at both events can be found in the “Publications” section of this website.
The GaNonCMOS consortium has now defined the voltage regulator modules (VRM) to be demonstrated during the project lifetime. At this point in time, we want to provide you more information on the chosen demonstrators at PCB-, stack- and chip-level and give you the opportunity to provide your feedback and wishes for the further fine-tuning of the GaNonCMOS technology. For more details on the demonstrators, please read our newsletter. Our survey can be found here.
GaNonCMOS partner Recom participated in the Electronica fair from 13 to 16 November 2018 in Munich. Electronica is a trade fair for the electronics industry. Exhibitors present components, systems, applications and services of the industry. In addition, forums and conferences are held in the fields of automotive and automotive electronics as well as embedded hardware and software. The GaNonCMOS banner was on display at Recom’s booth.
AT&S presented its first embedded inductor demonstrator at the NEPCON fair in Nagoya, Japan, held on 5 – 7 September 2018. More information on the demonstrator can be found in the “Publications” section of this website.
GaNonCMOS partner Recom took part in PCIM 2018 in Nürnberg. PCIM Europe, with its parallel conference, is an international trade fair for power electronics and their applications. At the PCIM Europe Conference from 05 to 07 June 2018, the latest research results and developments from all areas of power electronics are presented in first publications.
GaNonCMOS partner AT&S attended MiNaPAD, the Micro/Nano-Electronics Packaging & Assembly, Design and Manufacturing Forum, in Grenoble, France, from 16-17 May 2018. At MiNaPAD, AT&S had the opportunity a to both hold a presentation and to present a GaNonCMOS-related paper. The presentation as well as the paper are available for download from the “Publications” section of this website.
The coordinator of the GaNonCMOS project, Prof. Jean-Pierre Locquet of KU Leuven, held a keynote speech on the first day of the CS International Conference in Brussels on 10 April 2018. During his speech on the “Dense Integration of GaN Power Switches with CMOS Drivers”, Jean-Pierre presented the GaNonCMOS project and first project results to an audience of compound semiconductor stakeholders.
GaNonCMOS partner Recom attended the APEC 2018, a leading conference on Applied Power Electronics, conference in San Antonio, USA from 04 to 08 March 2018. As part of its exhibitor presentation, Recom also introduced the GaNonCMOS project to the international audience present at the event. Recom’s presentation can be downloaded from the “Publications” section of this website.
Stefan Eisenbrandt and Ralf Lerner of X-FAB published an article “Printing GaN HEMTs onto silicon CMOS” in the latest issue of Compound Semiconductor Magazine. The article details how using a micro-transfer printing technique could boost the efficiency of integrated power electronics by uniting high-performance GaN HEMTs with highly integrated silicon CMOS. The article is available for download in the “Publications” section of this website.
Odhran Reidy and Seamus O’Driscoll presented a poster with the title “GaNonCMOS H2020 Research: Sub-25V Switch Technologies for use in PwrSip and PwrSoC” at the MCCI Annual Forum at Tyndall National Institute Cork. The poster is also available for download from the Publications section of this website.
Arvind Sridhar of GaNonCMOS partner IBM was invited as a keynote speaker to the Nordic Conference on Microelectronics Packaging. During his speech he also spoke about the promising developments to be realised during the GaNonCMOS project.
The GaNonCMOS project was launched on 1 January 2017 with a duration of 4 years.