Category: Event

Summer school on wide-bandgap nitride devices

Nitride semiconductor technology – from substrate to application

( 8-11 July 2019)

Semiconductor power devices are a central part of any power conversion circuit and are ubiquitous in our daily lives: they transform voltages for a multitude of appliances, such as from the 220V AC mains to a 12V DC end-user appliance. Efficient power conversion systems are at the heart of the worldwide effort for a green economy, since they can minimize losses and save energy.

Systems employing wide bandgap semiconductors such as GaN-based devices allow for the implementation of electronics operating at high-switching speed, higher voltages, higher temperatures while maintaining high efficiencies. To unlock the full potential of GaN-based devises, we need to study and understand all the different aspects of the formed devices, from growing the raw material to packaging and a demonstration of its potential in a final device. In this course, we focus on two applications: high voltage power applications and densely integrated materials for CMOS drivers. The attendees will learn on the different aspects in creating such wide-bandgap devices:

  1. The challenges for growing wide bandgap materials and how semiconductor defects influence the final material.
  2. How the semiconductor material is being implemented in a final device, and how the processing can significantly improve the characteristics of the devices.
  3. How the fabricated devices can still fail, how to investigate these failures and how to categorise the degradation mechanisms.
  4. How a device is implemented in an consumer product, and the impact of specific ambient loads such as temperature on device performance.

This summer school is co-organised by the H2020 projects InRel-NPower and GaNonCMOS.



The programme will be updated in due time with more presentation information.

09:00    Introduction to the summer school

09:15     Keynote by O. Ambacher, University of Freiburg
GaN-based power electronics: current performance and future potential

10:45     Coffee break

11:00     J. Derluyn, EpiGaN,  and G. Lukin, Fraunhofer IISB
Growing high-quality GaN crystals

12:30     Lunch break

14:00    P. Moens, ONSemiconductor
GaN-based high-electron mobility power devices: technology and development

15:30     Coffee break

16:00     Poster presentations by participants


09:00    G. Meneghesso, University of Padua
Reliability of GaN-based power devices

10:30     Coffee break

11:00     M. Rittner, Robert Bosch
Aspects on Assembly and Interconnection Technologies of WBG Power Modules

12:30     Lunch break

14:00    K. Kriegel, Siemens
Industrial applications of wide-bandgap power electronics

15:30     Coffee break

16:00     Lecture to be confirmed.


09:00    Keynote on integrated GaN-on-CMOS technology

10:30     Coffee break

11:00     N. Akil, PNO Innovation

12:30     Lunch break

14:00    Company visit to ONSemiconductor, Oudenaarde


09:00     G. Weidinger, AT&S

10:30     Coffee break

11:00     R. Lerner, X-FAB

12:30     Lunch break

14:00    S. Suchovsky, RECOM

15:30    Closing of the summer school



Participation is free of charge (limited number of places).

Registration is possible through our registration page. Please register before 23 June 2019.



The workshop will be organised at:

Het Pand, Ghent University
Onderbergen 1
9000 Ghent, Belgium

Recommended student accomodation (without obligations)

Studens can book their overnight stay at the youth hostel ‘De Draeke’, located at a 10min walk from Het Pand for € 27 per night (< 30 years old). Please mention ‘Summer school GaN’ when making a reservation, preferrably before 1 May 2019.
Hostel De Draecke
Sint-Widostraat 11
9000 Gent


Our flyer can be downloaded here.



Department of Solid State Sciences, Ghent University
Krijgslaan 281 – Building S12
9000 Gent, Belgium

Phone: +32 (0)9 264 43 54

Contact by e-mail



The InRel-NPower project has received funding from the European Union’s Horizon 2020 Research and Innovation program under Grant Agreement No 720527.
The GaNonCMOS project has received funding from the European Union’s Horizon 2020 Research and Innovation program under Grant Agreement No 721107.

This summer school has been made possible through the support of Ghent University’s Doctoral Schools programme and Flanders State of the Art.

Flanders State of the Art


Joint Summer School with Inrel-Npower project

GaNonCMOS is happy to announce the organisation of a joint Summer School together with the Inrel-Npower project. The Summer School will be held Monday 8 to Friday 12th of July 2019 at the culture and congress centre ‘Het Pand’ in the city of Ghent, Belgium. The summer school aims to inform both young and experienced researchers with a focus of applications of GaN/AlGaN within the field of power applications and integration for CMOS devices. The workshop content will also contain major results obtained through both GaNonCMOS and the InRel-NPower project.