Category: Dissemination

GaNonCMOS included at Anwendungsforum Leistungshalbleiter and Power Electronics Conference

Markus Stöger of Recom recently held two presentations, including information about the GaNOnCMOS project, at the Anwendungsform Leistungshalbleister in Munich from 7 – 8 November 2018 and the Power Electronics Conference in Munich on 4 December 2018. A shortend version of the presentation that was held at both events can be found in the “Publications” section of this website.

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GaNonCMOS showcased at Electronica 2018

GaNonCMOS partner Recom participated in the Electronica fair from 13 to 16 November 2018 in Munich. Electronica is a trade fair for the electronics industry. Exhibitors present components, systems, applications and services of the industry. In addition, forums and conferences are held in the fields of automotive and automotive electronics as well as embedded hardware and software. The GaNonCMOS banner was on display at Recom’s booth. 

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GaNonCMOS presented at PCIM in Nürnberg

GaNonCMOS partner Recom took part in PCIM 2018 in Nürnberg. PCIM Europe, with its parallel conference, is an international trade fair for power electronics and their applications. At the PCIM Europe Conference from 05 to 07 June 2018, the latest research results and developments from all areas of power electronics are presented in first publications.

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GaNonCMOS partners attend APEC 2018

GaNonCMOS partner Recom attended the APEC 2018, a leading conference on Applied Power Electronics, conference in San Antonio, USA from 04 to 08 March 2018. As part of its exhibitor presentation, Recom also introduced the GaNonCMOS project to the international audience present at the event. Recom’s presentation can be downloaded from the “Publications” section of this website.

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Article published in Compound Semiconductor Magazine

Stefan Eisenbrandt and Ralf Lerner of X-FAB published an article “Printing GaN HEMTs onto silicon CMOS” in the latest issue of Compound Semiconductor Magazine. The article details how using a micro-transfer printing technique could boost the efficiency of integrated power electronics by uniting high-performance GaN HEMTs with highly integrated silicon CMOS. The article is available for download in the “Publications” section of this website.

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